Display device having a domain-forming layer with a depression pattern and method of manufacturing the same

ABSTRACT

A display device may include a first substrate, a second substrate, and a liquid crystal layer. The first substrate may include a domain-forming layer including a depression pattern for forming a liquid crystal domain in a pixel area and a pixel electrode formed on the domain-forming layer. The second substrate may face the first substrate. The second substrate may include a common electrode formed on the entire surface thereof. The liquid crystal layer may be disposed between the first substrate and the second substrate. The liquid crystal layer may include a reactive mesogen (RM) which fixes liquid crystal molecules formed in the liquid crystal domain. Since a liquid crystal domain may be formed without a separate pattern on a common electrode, a display device having an enhanced aperture ratio and an enhanced viewing angle may be manufactured.

CROSS REFERENCE TO RELATED APPLICATION

This application claims priority from and the benefit of Korean PatentApplication No. 10-2009-0010026, filed on Feb. 9, 2009, which is herebyincorporated for all purposes as if fully set forth herein.

BACKGROUND OF THE INVENTION

1. Field of the Invention

Exemplary embodiments of the present invention relate to liquid crystaldisplay devices and methods of manufacturing the same.

2. Description of the Background

Generally, a liquid crystal display (LCD) panel may include an arraysubstrate, an opposite substrate facing the array substrate, and aliquid crystal layer interposed between the array substrate and theopposite substrate. A plurality of switching elements for driving pixelareas may be formed on the array substrate. The LCD panel may display animage by controlling transmissivity when a voltage is applied to theliquid crystal layer interposed between two substrates.

In a patterned vertical alignment (PVA) mode of an LCD device, liquidcrystal molecules may be arranged in different directions by using apatterned transmissive electrode to form a liquid crystal domain, sothat a viewing angle of the LCD device may be enhanced. To manufacturethe PVA-mode LCD device, a process of forming the patterned transmissiveelectrode may be required. Moreover, in another type of the PVA mode, aprotrusion may be formed on the opposite substrate and a commonelectrode layer may be formed on the opposite substrate on which theprotrusion is formed, so that a liquid crystal domain providing anenhanced viewing angle of the LCD device may be formed. However, aseparate process for forming the protrusion may be required.

As described above, in order to form a liquid crystal domain in aPVA-mode LCD device, a process of patterning a transmissive electrodeand/or a process of forming a protrusion may be performed, therebyleading to a greater number of steps in the manufacturing process of anLCD device. Furthermore, patterning of the transmissive electrode andforming of the protrusion may reduce the aperture ratio of the LCDdevice. Moreover, in an assembly process of a display substrate and theopposite substrate, misalignment of the display substrate and theopposite substrate may generate misalignment of patterns of the displaysubstrate's pixel electrode and the opposite substrate's commonelectrode, so that a liquid crystal domain is not appropriately formed.

SUMMARY OF THE INVENTION

Exemplary embodiments of the present invention provide a display deviceand a method of manufacturing the display device with greatermanufacturing efficiency and display quality.

Additional features of the invention will be set forth in thedescription which follows, and in part will be apparent from thedescription, or may be learned by practice of the invention.

Exemplary embodiments of the present invention disclose a display devicecomprising a first substrate, a second substrate, and a liquid crystallayer. The first substrate comprises a domain-forming layer comprising adepression pattern to form a liquid crystal domain in a pixel area and apixel electrode. The second substrate faces the first substrate. Thesecond substrate comprises a common electrode. The liquid crystal layeris disposed between the first substrate and the second substrate. Theliquid crystal layer comprises a reactive mesogen (RM) to fix liquidcrystal molecules forming a liquid crystal domain.

Other exemplary embodiments of the present invention disclose a displaydevice comprising a first substrate, a second substrate, and a liquidcrystal layer. The first substrate comprises a pixel electrode having anopening pattern to form a liquid crystal domain on a pixel area. Thesecond substrate faces the first substrate. The second substratecomprises a common electrode. The liquid crystal layer is disposedbetween the first substrate and the second substrate. The liquid crystallayer comprises a reactive mesogen to fix liquid crystal molecules inthe liquid crystal domain.

Other exemplary embodiments of the present invention disclose a methodof manufacturing a display device. The method comprises manufacturing afirst substrate comprising a domain-forming layer comprising adepression pattern to form a liquid crystal domain in a pixel area and apixel electrode formed on the domain-forming layer. The method furthercomprises manufacturing a second substrate facing the first substrate.The second substrate comprises a common electrode. The method furthercomprises disposing a liquid crystal composition material comprisingliquid crystal molecules and reactive mesogen monomers between the firstsubstrate and the second substrate. The method further comprises forminga liquid crystal layer by applying light to the liquid crystal moleculesand the reactive mesogen monomers disposed between the first substrateand the second substrate. A first voltage is applied to the commonelectrode and a second voltage is applied to the pixel electrode.

Other exemplary embodiments of the present invention disclose a methodof manufacturing a display device. The method comprises manufacturing afirst substrate comprising a pixel electrode having an opening patternto form a liquid crystal domain in a pixel area. The method furthercomprises manufacturing a second substrate facing the first substrate.The second substrate comprises a common electrode. The method furthercomprises forming a liquid crystal layer by applying light to liquidcrystal molecules and reactive mesogen monomers disposed between thefirst substrate and the second substrate. A first voltage is applied tothe common electrode and a second voltage is applied to the pixelelectrode.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and areintended to provide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification, illustrate exemplary embodiments of theinvention, and together with the description serve to explain theprinciples of the invention.

FIG. 1 is a plan view illustrating a display device according toexemplary embodiments of the present invention.

FIG. 2A is a cross-sectional view taken along a line I-I′ of FIG. 1.

FIG. 2B is a cross-sectional view taken along a line II-II′ of FIG. 1.

FIG. 2C is a cross-sectional view showing a state in which a voltage isapplied to the display device of FIG. 2B.

FIG. 3A, FIG. 3B, FIG. 3C, FIG. 3D, and FIG. 3E are cross-sectionalviews showing a method of manufacturing the display device of FIG. 2Baccording to exemplary embodiments of the present invention.

FIG. 4 is a cross-sectional view of a display device according toexemplary embodiments of the present invention.

FIG. 5A, FIG. 5B, and FIG. 5C are cross-sectional views showing a methodof manufacturing the display device of FIG. 4 according to exemplaryembodiments of the present invention.

FIG. 6 is a plan view illustrating a display device according toexemplary embodiments of the present invention.

FIG. 7 is a cross-sectional view taken along a line III-III′ of FIG. 6.

FIG. 8 is a cross-sectional view showing a method of manufacturing thedisplay device of FIG. 7 according to exemplary embodiments of thepresent invention.

FIG. 9 is a cross-sectional view of a display device according toexemplary embodiments of the present invention.

FIG. 10 is a cross-sectional view showing a method of manufacturing thedisplay device of FIG. 9 according to exemplary embodiments of thepresent invention.

FIG. 11 is a plan view illustrating a display device according toexemplary embodiments of the present invention.

FIG. 12 is a cross-sectional view taken along a line IV-IV′ of FIG. 11.

FIG. 13A and FIG. 13B are cross-sectional views showing a method ofmanufacturing the display device of FIG. 12 according to exemplaryembodiments of the present invention.

FIG. 14 is a cross-sectional view illustrating a transmissive modedisplay device of a transmittance mode having a structure of FIG. 11.

FIG. 15 is a plan view illustrating a display device according toexemplary embodiments of the present invention.

FIG. 16 is a cross-sectional view taken along a line V-V′ of FIG. 15.

FIG. 17A, FIG. 17B, and FIG. 17C are cross-sectional views showing amethod of manufacturing the display device of FIG. 16 according toexemplary embodiments of the present invention.

FIG. 18 is a plan view illustrating a display device according toexemplary embodiments of the present invention.

FIG. 19A is a cross-sectional view taken along a line VI-VI′ of FIG. 18.

FIG. 19B is a cross-sectional view taken along a line VII-VII′ of FIG.18.

FIG. 20 is a flowchart showing a method of manufacturing the displaydevice of FIG. 19B according to exemplary embodiments of the presentinvention.

FIG. 21 is a flowchart showing a method of manufacturing a displaydevice according to exemplary embodiments of the present invention;

FIG. 22 is a cross-sectional view illustrating a display deviceaccording to exemplary embodiments of the present invention; and

FIG. 23 is a cross-sectional view illustrating a display deviceaccording to exemplary embodiments of the present invention.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

The present invention is described more fully hereinafter with referenceto the accompanying drawings, in which exemplary embodiments of thepresent invention are shown. The present invention may, however, beembodied in many different forms and should not be construed as limitedto the exemplary embodiments set forth herein. Rather, these exemplaryembodiments are provided so that this disclosure will be thorough andcomplete, and will fully convey the scope of the present invention tothose skilled in the art. In the drawings, the sizes and relative sizesof layers and regions may be exaggerated for clarity.

It will be understood that when an element or layer is referred to asbeing “on,” “connected to” or “coupled to” another element or layer, itcan be directly on, connected or coupled to the other element or layeror intervening elements or layers may be present. In contrast, when anelement is referred to as being “directly on,” “directly connected to”or “directly coupled to” another element or layer, there are nointervening elements or layers present. Like numerals refer to likeelements throughout. As used herein, the term “and/or” includes any andall combinations of one or more of the associated listed items.

It will be understood that, although the terms first, second, third,etc. may be used herein to describe various elements, components,regions, layers and/or sections, these elements, components, regions,layers and/or sections should not be limited by these terms. These termsare only used to distinguish one element, component, region, layer orsection from another region, layer or section. Thus, a first element,component, region, layer or section discussed below could be termed asecond element, component, region, layer or section without departingfrom the teachings of the present invention.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper” and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the exemplary term “below” can encompass both anorientation of above and below. The device may be otherwise oriented(rotated 90 degrees or at other orientations) and the spatially relativedescriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particularexemplary embodiments only and is not intended to be limiting of thepresent invention. As used herein, the singular forms “a,” “an” and“the” are intended to include the plural forms as well, unless thecontext clearly indicates otherwise. It will be further understood thatthe terms “comprises” and/or “comprising,” when used in thisspecification, specify the presence of stated features, integers, steps,operations, elements, and/or components, but do not preclude thepresence or addition of one or more other features, integers, steps,operations, elements, components, and/or groups thereof.

Exemplary embodiments of the invention are described herein withreference to cross-sectional illustrations that are schematicillustrations of idealized exemplary embodiments (and intermediatestructures) of the present invention. As such, variations from theshapes of the illustrations as a result, for example, of manufacturingtechniques and/or tolerances, are to be expected. Thus, exemplaryembodiments of the present invention should not be construed as limitedto the particular shapes of regions illustrated herein but are toinclude deviations in shapes that result, for example, frommanufacturing. For example, an implanted region illustrated as arectangle will, typically, have rounded or curved features and/or agradient of implant concentration at its edges rather than a binarychange from implanted to non-implanted region. Likewise, a buried regionformed by implantation may result in some implantation in the regionbetween the buried region and the surface through which the implantationtakes place. Thus, the regions illustrated in the figures are schematicin nature and their shapes are not intended to illustrate the actualshape of a region of a device and are not intended to limit the scope ofthe present invention.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this invention belongs. It will befurther understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andwill not be interpreted in an idealized or overly formal sense unlessexpressly so defined herein.

Hereinafter, exemplary embodiments of the present invention will beexplained in detail with reference to the accompanying drawings andfollowing examples.

EXAMPLE 1

FIG. 1 is a plan view illustrating a display device according to someexemplary embodiments of the present invention.

FIG. 2A is a cross-sectional view taken along a line I-I′ of FIG. 1, andFIG. 2B is a cross-sectional view taken along a line II-IF of FIG. 1.

FIG. 2A and FIG. 2B show, states of a reactive mesogen (RM) and liquidcrystal molecules of non-electric field in which a voltage is notapplied between a pixel electrode and a common electrode.

Referring to FIG. 1, FIG. 2A and FIG. 2B, a display device may include afirst substrate 100, a second substrate 200, and a liquid crystal layer300 interposed between the first substrate 100 and the second substrate200.

The first substrate 100 may include a first base substrate 110, firstand second gate lines GL1 and GL2, a storage line STL, a gate insulationlayer 120, first and second data lines DL1 and DL2, a thin-filmtransistor (TFT) SW that may be a switching element in some cases, apassivation film 140, a domain-forming layer 150, a pixel electrode PE,and a first alignment layer AL1.

The first and second gate lines GL1 and GL2 may be extended along afirst direction D1 on the first base substrate 110. In some cases, thefirst and second gate lines GL1 and GL2 may be arranged in parallel witha second direction D2 that is different from the first direction D1. Thesecond direction D2 may be substantially perpendicular to the firstdirection D1. The storage line STL may be disposed between the first andsecond gate lines GL1 and GL2 and may extend along the first directionD1. The gate insulation layer 120 may be formed on the first basesubstrate 110 to cover the first and second gate lines GL1 and GL2 andthe storage line STL. In some cases, the first and second data lines DL1and DL2 may extend along the second direction D2 on the gate insulationlayer 120. In some cases, the first and second data lines DL1 and DL2may be arranged along the first direction D1 in parallel with eachother. The first and second data lines DL1 and DL2 may cross each of thefirst and second gate lines GL1 and GL2 and the storage line STL. Thefirst substrate 100 may include a plurality of pixel areas P formed bycrossing of the first and second gate lines GL1 and GL2 and the firstand second data lines DL1 and DL2. The pixel electrode PE may be formedon the pixel areas P.

The TFT SW may include a first gate electrode GE connected to the firstgate line GL1; an active pattern AP formed on the gate insulation layer120; a source electrode SE overlapping, at least partially, the activepattern AP and being connected to the first data line DL1; a drainelectrode DE overlapping, at least partially, the pixel area P and beingspaced apart from the source electrode SE; and a contact electrode CNTextending from the drain electrode DE to the pixel area P. The TFT SWmay include a semiconductor layer 130 a and an ohmic contact layer 130 bsequentially formed on the gate insulation layer 120. The contactelectrode CNT may extend from the drain electrode DE to the storage lineSTL. The contact electrode CNT may overlap the storage line STL.

The passivation film 140 may be formed on the gate insulation layer 120to cover the first and second data lines DL1 and DL2, the sourceelectrode SE, the drain electrode DE, and the contact electrode CNT.

The domain-forming layer 150 may be formed on the passivation film 140.The domain-forming layer 150 may planarize the first substrate 100. Thedomain-forming layer 150 may include a depression pattern 152 that maybe depressed from a surface of the domain-forming layer 150 toward thefirst substrate 110. The depression pattern 152 may be formed in thepixel area P to yield a liquid crystal domain of the pixel area P. Thedepression pattern 152 may be formed in the domain-forming layer 150 ina dot shape. The depression pattern 152 may extend to the contactelectrode CNT. The depression pattern 152 may be a dot-shaped hole,which may expose a portion of the contact electrode CNT. Even though thedepression pattern 152 is formed as a dot-shaped hole, light leakagewhere the depression pattern 152 is formed may be prevented. In somecases, the domain-forming layer 150 may include an organic material. Insome cases, the domain-forming layer 150 may include an inorganicmaterial. In some cases, the domain-forming layer 150 may include anorganic layer formed from the organic material, an inorganic layerformed from the inorganic material, and the depression pattern 152formed on the organic layer or the inorganic layer.

The pixel electrode PE may be formed on the domain-forming layer 150 inthe pixel area P. The pixel electrode PE may include an opticallytransparent and electrically conductive material. The pixel electrode PEmay be formed to cover the depression pattern 152. In some cases, theentire depression pattern 152 may be covered by the pixel electrode PE.The pixel electrode PE may contact the contact electrode CNT through thedepression pattern 152, thereby electrically connecting the pixelelectrode PE to the TFT SW. An area of the pixel electrode PE on thedepression pattern 152 may be relatively wider than an area of the pixelelectrode PE formed on a planar area of the domain-forming layer 150.Accordingly, when an electric field is formed between the firstsubstrate 100 and the second substrate 200, an electric field intensityof an area adjacent to the depression pattern 152 may be relativelygreater than an electric field intensity of the planar area in which thedepression pattern 152 is not formed.

In some cases, the first alignment layer AL1 may be formed on the entiresurface of the first base substrate 110 including the pixel electrodePE. In some cases, the first alignment layer AL1 may be formed on partof the surface of the first base substrate 110 including the pixelelectrode PE.

The second substrate 200 may include a second base substrate 210 facingthe first substrate 100, a black matrix pattern 220, a first colorfilter 232, a second color filter 234, a third color filter 236, anovercoating layer 240, a common electrode layer 250, and a secondalignment layer AL2. In some cases, the overcoating layer 240 may beomitted from the second substrate 200.

The black matrix pattern 220 may be formed on the second base substrate210 in an area that corresponds to the area in which the first andsecond gate lines GL1 and GL2, the first and second data lines DL1 andDL2, and the TFT SW are formed. The first, second and third colorfilters 232, 234, and 236 may be formed on the second base substrate210. The black matrix pattern 220 may be placed between the colorfilters 232, 234, and 236. For example, the first color filter 232 maybe formed on the second base substrate 210 in an area corresponding tothe pixel area P on which the pixel electrode PE is formed. The secondcolor filter 234 may be formed in the first direction D1, and the thirdcolor filter 236 may be formed in an opposite direction of the firstdirection D1. The overcoating layer 240 may be formed on the second basesubstrate 210 on which the black matrix pattern 220 and the first,second and third color filters 232, 234 and 236 are formed. Theovercoating layer 240 may planarize the second substrate 200.

The common electrode 250 may be formed on the overcoating layer 240. Thecommon electrode 250 may include an optically transparent andelectrically conductive material. The common electrode 250 may be formedon the second substrate 200 without a separate depression pattern beingformed thereon. In some cases, the common electrode 250 may cover anentire surface of the second substrate 200.

The second alignment layer AL2 may be formed on the common electrode250, and may be formed, in some cases, on the entire surface of thesecond substrate 200.

The liquid crystal layer 300 may be disposed between the first substrate100 and the second substrate 200. The liquid crystal layer 300 mayinclude the liquid crystal molecules 310 and an RM curing material 320.An electric field may be generated between the pixel electrode PE andthe common electrode 250. An arrangement of the liquid crystal molecules310 may be altered by the electric field via the pixel electrode PE anddepression pattern 152, so that a transmissivity may be adjusted. Theliquid crystal molecules 310 may have negative dielectric anisotropy.

When a voltage is not applied to the pixel electrode PE and the commonelectrode 250, a long axis of the liquid crystal molecules 310 adjacentto the first substrate 100 and/or the second substrate 200 may bearranged substantially perpendicular to a surface of the first basesubstrate 110 and/or a surface of the second base substrate 210. Withrespect to a surface of a side wall of the domain-forming layer 150which forms the depression pattern 152, a long axis of the liquidcrystal molecules 310 adjacent to the depression pattern 152 may bearranged perpendicular to a surface of the side wall.

The RM curing material 320 may be disposed along the liquid crystalmolecules 310 adjacent to the pixel electrode PE and/or the commonelectrode 250. For example, the RM curing material 320 may be disposedalong the liquid crystal molecules 310 adjacent to the first alignmentlayer AL1 and/or the second alignment layer AL2.

Even though an electric field may not be applied to the pixel electrodePE and the common electrode 250, the RM curing material 320 may maintaina pretilt state with respect to the surface of the first base substrate110 and/or the surface of the second base substrate 210. A plurality ofRM monomers 330 (refer to FIG. 3E) may be polymerized by external lightduring a manufacturing process of the display device, so that the RMcuring material 320 may be formed.

FIG. 2C is a cross-sectional view showing a state in which a voltage isapplied to the display device of FIG. 2B.

Referring to FIG. 2C, when an electric field is formed between the pixelelectrode PE and the common electrode 250, a direction of the electricfield inside the pixel area P may be perpendicular to a surface of thefirst substrate 100 and/or the second substrate 200.

In some cases, the direction of the electric field may be curved betweenan end portion of the pixel electrode PE and the common electrode 250.The direction of the electric field may also be curved between an endportion of another pixel electrode adjacent to the pixel electrode PEand the common electrode 250. Accordingly, in an area adjacent to thepixel electrodes PE, the liquid crystal molecules 310 may be arranged todiffuse towards the adjacent portion of the common electrode 250, sothat a liquid crystal domain between the adjacent pixel areas P may bedivided.

An electric field in an area adjacent to the depression pattern 152 mayhave a shape which convergences toward a first position of the commonelectrode 250, for example, an area of the common electrode 250corresponding to the depression pattern 152, due to a pretilt by sidewalls of the depression pattern 152.

FIG. 3A, FIG. 3B, FIG. 3C, FIG. 3D, and FIG. 3E are cross-sectionalviews taken along a line II-II′ of FIG. 1 illustrating a process formanufacturing the display device of FIG. 2B according to exemplaryembodiments of the present invention. FIG. 3A, FIG. 3B, FIG. 3C, FIG.3D, and FIG. 3E may be explained in detail with reference to FIG. 1,FIG. 2B, and FIG. 2C.

Referring to FIG. 3A, a gate metal layer (not shown) may be formed onthe first base substrate 110. The gate metal layer may be patternedthrough a photolithography process to form a gate pattern including thefirst and second gate lines GL1 and GL2, the gate electrode GE and thestorage line STL.

The gate insulation layer 120 may be disposed on the first basesubstrate 110 having the gate pattern formed thereon. The gateinsulation layer 120 may include silicon oxide (SiOx) and/or siliconnitride (SiNx). In general, any suitable material may be used to formthe gate insulation layer 120.

The active pattern AP may include the semiconductor layer 130 a and theohmic contact layer 130 b. The semiconductor layer 130 a and the ohmiccontact layer 130 b may sequentially be formed on the gate insulationlayer 120. The semiconductor layer 130 a may include amorphous silicon(a-Si), and the ohmic contact layer 130 b may include N+ amorphoussilicon doped with a high concentration of n-type dopants. In should beunderstood that various suitable materials may be used alone or incombination to form the semiconductor layer 130 a and/or the ohmiccontact layer 130 b.

A data metal layer (not shown) may be formed on the active pattern AP.The data metal layer may be patterned through a photolithography processto form a source pattern including the first and second data lines DL1and DL2, the source electrode SE, the drain electrode DE, and thecontact electrode CNT.

The passivation layer 140 and the domain-forming layer 150 maysequentially be formed on the source pattern. A material forming thepassivation layer 140 may be, for example, silicon oxide (SiOx) and/orsilicon nitride (SiNx). A material forming the domain-forming layer 150may be, for example, an organic material such as a positive photoresistcomposition, a negative photoresist composition, and/or an inorganicmaterial such as silicon oxide (SiOx), silicon nitride (SiNx). In shouldbe understood that various suitable materials may be used alone or incombination to form the passivation layer 140 and the domain forminglayer 150.

Referring to FIG. 3B, the domain-forming layer 150 may be patterned toform the depression pattern 152. The depression pattern 152 may beformed on the contact electrode CNT. The contact electrode CNT mayoverlap the storage line STL. The depression pattern 152 may be formedin a hole-shape exposing the passivation film 140 on the contactelectrode CNT.

Then, the passivation film 140 exposed through the depression pattern152 may be removed to form a passivation hole 142. The passivation hole142 may be formed on the contact electrode CNT. A portion of the contactelectrode CNT may be exposed through the contact hole 142 and thedepression pattern 152.

Referring to FIG. 3C, a transmissive electrode layer (not shown) may beformed on the domain-forming layer 150 and in the depression pattern152. The transmissive electrode may be patterned to form the pixelelectrode PE. The transmissive electrode layer may include indium tinoxide (ITO) and/or indium zinc oxide (IZO).

The first alignment layer AL1 may be disposed on the pixel electrode PE.The first alignment layer AL1 may include a vertical alignment materialwhich may vertically align the liquid crystal molecules 310.

Accordingly, the first substrate 100 including the gate insulation layer120, the active pattern AP, the source pattern, the passivation layer140, the depression pattern 152, the pixel electrode PE, and the firstalignment layer AL1 may be manufactured.

FIG. 3D is a cross-sectional view showing a method of manufacturing thesecond substrate of FIG. 2B.

Referring to FIG. 3D, the black matrix pattern 220 may be formed on thesecond base substrate 210. The black matrix pattern 220 may be formed byspraying an organic ink or patterning a metal layer through aphotoetching process.

The first, second and third color filters 232, 234 and 236 may be formedon the second base substrate 210 and the black matrix pattern 220. Forexample, the first color filter 232 may be formed on the second basesubstrate 210, the second color filer 234 may be formed on the firstcolor filer 232, and the third color filter 234 may be formed on thefirst and second color filters 232 and 234. The first, second and thirdcolor filters 232, 234 and 236 may be formed by patterning a colorphotoresist layer through a photoetching process or by spraying a colorink.

The overcoating layer 240 may be disposed on the black matrix pattern220 and the first to third color filters 232, 234 and 236. An acrylateresin may be used to form the overcoating layer 240.

A transmissive electrode layer (not shown) may be disposed on theovercoating layer 240 to form the common electrode 250. In some cases,the common electrode 250 may cover the entire surface of the second basesubstrate 210 without patterning the transmissive electrode layer. Thecommon electrode 250 may include indium tin oxide (ITO) and/or indiumzinc oxide (IZO).

The second alignment layer AL2 may be disposed on the common electrode250. In some cases, the second alignment layer AL2 may cover the entiresurface of the common electrode 250.

Therefore, the second substrate 200 including the black matrix pattern220, the first to third color filters 232, 234 and 236, the overcoatinglayer 240, the common electrode 250, and the second alignment layer AL2may be manufactured.

FIG. 3E is a cross-sectional view showing a step of forming the liquidcrystal layer in FIG. 2B.

Referring to FIG. 3E, the first substrate 100 and the second substrate200 may be assembled with each other. The liquid crystal molecules 310and the RM monomer 330 may be disposed between the first substrate 100and the second substrate 200. In some cases, the liquid crystalmolecules 310 and the RM monomer 330 may randomly be disposed betweenthe first substrate 100 and the second substrate 200.

A first voltage Vcom may then be applied to the common electrode 250,and a second voltage Vdata that is different from the first voltage Vcommay be applied to the pixel electrode PE. The applied voltages (e.g.,Vdata, Vcom) may be a positive voltage, a negative voltage, and/or azero voltage (e.g., ground potential). By applying different voltages tothe common electrode 250 and the pixel electrode PE, an electric fieldmay be formed between the pixel electrode PE and the common electrode250. When the electric field is formed therebetween, a long axis of theliquid crystal molecules 310 may be perpendicular to the electric fielddirection.

In some cases, the first voltage Vcom may have a higher level than thesecond voltage Vdata. For example, the first voltage Vcom may be about 0V, and the second voltage Vdata may be a negative value. The secondvoltage Vdata may be about −5 V.

When an electric field is formed between the first substrate 100 and thesecond substrate 200 thereby pretilting liquid crystal molecules 310,light is irradiated into the first and second substrates 100 and 200.The light may be, for example, ultraviolet (UV) light. The RM monomers330 may react to the light and may be polymerized thus forming the RMcuring material 320 between the liquid crystal molecules 310.Accordingly, the liquid crystal layer 300 according to Example 1 may beformed.

A liquid crystal domain may be formed by the depression pattern 152 inthe domain-forming layer 150 without separately forming a pattern on thecommon electrode 250. Thus, an aperture ratio of the pixel area P and aviewing angle of the LCD may be enhanced. Moreover, since a separatepattern is not formed on the common electrode 250, problems due tomisalignment of the first and second substrates 100 and 200 may, inprinciple, no longer exist. Furthermore, a separate patterning processfor patterning the common electrode 250 is omitted, so that amanufacturing process may be simplified. Therefore, production anddisplay quality of a display device may be enhanced.

EXAMPLE 2

FIG. 4 is a cross-sectional view of a display device according to someexemplary embodiments of the present invention.

A structure of the display device according to the illustratedembodiment shown in FIG. 4 is substantially the same as the structure ofthe display device shown in FIG. 1. Thus, a plan view of FIG. 4 may beexplained with reference to FIG. 1, and any repetitive detailedexplanation may be hereinafter omitted.

Referring to FIG. 1 and FIG. 4, a display device may include a firstsubstrate 100, a second substrate 200, and a liquid crystal layer 300.

The first substrate 100 may include a first base substrate 110, astorage line STL, a gate insulation layer 120, a first data line DL1, asecond data line DL2, a passivation film 140, a domain-forming layer150, a pixel electrode PE, and a first alignment layer AL1. The storageline STL may be formed on the first base substrate 110. The gateinsulation layer 120 may be disposed over the storage line STL. Thefirst data line DL1 and the second data line DL2 may be formed on thegate insulation layer 120. The passivation film 140 may be patterned andmay expose a portion of the contact electrode CNT. The domain-forminglayer 150 may be disposed on the passivation film 140 and the depressionpattern 152 may be formed to expose a portion of the contact electrodeCNT. The pixel electrode PE may be formed on the domain-forming layer150 and may contact the contact electrode CNT through the depressionpattern 152. The first alignment layer AL1 may cover the pixel electrodePE.

The domain-forming layer 150 may be formed on the passivation layer 140to planarize the first substrate 100. The domain-forming layer 150 maybe formed in a pixel area P of the first base substrate 110. Thedomain-forming layer 150 may include one or more color filters. Forexample, the domain-forming layer 150 may include a positive-type colorphotoresist and/or a negative-type color photoresist. For example, afirst color filter layer CF1 and a second color filter layer CF2 may berespectively formed on areas adjacent to the pixel area P where thedomain-forming layer 150 is formed. The domain-forming layer 150 may beformed using a different material than the materials used to form thefirst and second color filters CF1 and CF2. The domain-forming layer 150may provide a first color, the first color filter layer CF1 may providea second color different from the first color, and the second colorfilter layer CF2 may provide a third color different from the first andsecond colors. In some cases, for example, the domain-forming layer 150and the first and second color filters CF1 and CF2 may provide red,green, and blue colors.

The domain-forming layer 150 may include the depression pattern 152,which may extend to an overlapping area with the storage line STL. Thedepression pattern 152 may form a liquid crystal domain of a pixel areaP. Each of the first and second color filter layers CF1 and CF2 mayinclude the depression pattern 152. The depression pattern 152 may besubstantially the same as the depression pattern described hereinabovewith reference to FIG. 2A and FIG. 2B, thus any repetitive detailedexplanation may be hereinafter omitted.

The domain-forming layer 150 may include a color layer (not shown)including color filters displaying different colors and a pattern layer(not shown) formed on the color layer. The color layer may include afirst color filter, a second color filter, and a third color filter. Thepattern layer may include the depression pattern 152, which may form aliquid crystal domain in the pixel area P. The pattern layer may includean organic material and/or an inorganic material.

The second substrate 200 may include a common electrode 250 and a secondalignment layer AL2, as described hereinabove with reference to FIG. 2Aand FIG. 2B.

FIG. 5A, FIG. 5B, and FIG. 5C are cross-sectional views showing a methodof manufacturing the display device of FIG. 4.

FIG. 5A and FIG. 5B are cross-sectional views illustrating amanufacturing process of the first substrate shown in FIG. 4. In FIG.5A, the storage line STL, the gate insulation layer 130, the first andsecond data lines DL1 and DL2 and the passivation film 140 may be formedin substantially the same manner as described with reference to FIG. 3A,and thus any repetitive detailed explanation may hereinafter be omitted.

Referring to FIG. 5A, a first color photoresist layer (not shown) may beformed on the passivation layer 140 from an organic material including apigment displaying a first color. The first color photoresist layer maybe patterned through a photolithography process to form thedomain-forming layer 150 formed on the pixel area P. The domain-forminglayer 150 may overlap portions of the first and second data lines DL1and DL2.

Referring to FIG. 4 and FIG. 5B, a second color photoresist layer (notshown) may be formed on the domain-forming layer 150 and the passivationlayer 140, and may subsequently be patterned through a photolithographyprocess to form the first color layer CF1. The first color layer CF1 maybe formed on a first side of the domain-forming layer 150. That is, thefirst color layer CF1 may be formed in an area adjacent to the pixelarea P. The first color layer CF1 may be a domain-forming layer of thefirst pixel area adjacent to the pixel area P.

A third color photoresist layer (not shown) may be disposed on thedomain-forming layer 150 and the first color layer CF1. The third colorphotoresist layer may then be patterned through a photolithographyprocess to form the second color layer CF2. The second color layer CF2may be a domain-forming layer of a second pixel area substantiallyadjacent to the pixel area P

Then, the depression pattern 152 may be formed on the domain-forminglayer 150. The depression pattern 152 may be formed on the contactelectrode CNT. The depression pattern 152 may expose the passivationlayer 140 on the contact electrode CNT. A plurality of depressionpatterns substantially identical to the depression pattern 152 may beformed in the first and second color layers CF1 and CF2.

A portion of the passivation layer 140 exposed through the depressionpattern 152 may be removed to form a passivation hole 142 to expose thecontact electrode CNT. A transmissive electrode layer (not shown) may beformed on the passivation hole 142. The transmissive electrode layer maythen be patterned through a photolithography process to form the pixelelectrode PE. The contact electrode CNT exposed through the depressionpattern 152 and the passivation hole 142 may be in contact with thepixel electrode PE. The pixel electrode PE may cover the entire surfaceof the pixel area P.

The first alignment layer AL1 may then be formed on the pixel electrodePE.

FIG. 5C is a cross-sectional view illustrating a step of manufacturingthe second substrate shown in FIG. 4.

Referring to FIG. 5C, a transmissive electrode layer (nor shown) may beformed on the second base substrate 210, so that the common electrode250 may be formed. In some cases, the common electrode 250 may be formedto cover the entire surface of the second baser substrate 210 without aprocess of patterning the transmissive electrode layer. The secondalignment layer AL2 may be formed on the common electrode 250.

The first substrate 100 and the second substrate may then be assembledwith each other, and a liquid crystal layer 300 may be formed betweenthe first substrate 100 and the second substrate 200. A process offorming the liquid crystal layer 300 may be substantially the same asthe process of forming the liquid crystal layer as described hereinabovewith reference to FIG. 3E, and any repetitive detailed explanation mayhereinafter be omitted.

Thus, a display device according to Example 2 may be manufactured.

The depression pattern 152 may be formed without forming a separatepattern in the common electrode 250, so that a liquid crystal domain maybe formed. Thus, the aperture ratio of the pixel area P and the viewingangle of the display device may be enhanced. Moreover, since a separatepattern may not be formed on the common electrode 250, misalignment ofthe first and second substrates 100 and 200 may, in principal, beremoved. Furthermore, a separate patterning process for patterning thecommon electrode 250 may be omitted, so that a manufacturing process ofthe display device may be simplified. In addition, the domain-forminglayer 150 may be formed using a color photoresist layer, so that amanufacturing process of the display device may be simplified.

EXAMPLE 3

FIG. 6 is a plan view illustrating a display device according to someexemplary embodiments of the present invention.

FIG. 7 is a cross-sectional view taken along a line III-III′ of FIG. 6.

Referring to FIG. 6 and FIG. 7, a display device according to someexemplary embodiments may include a first substrate 100, a secondsubstrate 200, and a liquid crystal layer 300.

The first substrate 100 may include a first base substrate 110, firstand second gate lines GL1 and GL2, a storage line STL, a gate insulationlayer 120, first and second data lines DL1 and DL2, a thin-filmtransistor (TFT) SW that may be a switching element, a passivation film140, a domain-forming layer 150, a pixel electrode PE, and a firstalignment layer AL1. The first substrate 100 may be substantially thesame as the first substrate described with reference to FIG. 1, FIG. 2A,and FIG. 2B except for the TFT SW and the domain-forming layer 150. Anyrepetitive detailed explanation of the first substrate may hereinafterbe omitted.

The TFT SW may include a gate electrode GE connected to the first gateline GL1, an active pattern (not shown) formed on the gate electrode GE,a source electrode SE connected to the first data line DL1, a drainelectrode DE spaced apart from the source electrode SE1, and a contactelectrode CNT connected to the drain electrode DE to contact the pixelelectrode PE. The contact electrode CNT may be extended toward thestorage line STL. The contact electrode CNT may be formed on a pixelarea P of the first base substrate 110 and may not overlap with thestorage line STL.

The domain-forming layer 150 may be formed on the first and second datalines DL1 and DL2, the source electrode SE, and the drain electrode DE.The domain-forming layer 150 may include a depression pattern 152 whichmay be formed in an area corresponding to the storage line STL or may beformed in correspondence with patterns formed from an opaque metalexcept the storage line STL. The patterns formed from opaque metalexcept for the storage line STL may include, for example, the first andsecond gate lines GL1 and GL2, and/or the first and second data linesDL1 and DL2. The domain-forming layer 150 may be removed, at leastpartially, by a predetermined thickness, so that the depression pattern152 may be formed. The depression pattern 152 may be formed in ahole-shape to expose the passivation layer 140. The depression pattern152 may form a liquid crystal domain of the pixel area P. The storageline STL and/or other patterns formed from an opaque metal formed belowthe depression pattern 152 may prevent light leakage generated by thedepression pattern 152 from being generated.

In FIG. 6 and FIG. 7, the domain-forming layer 150 may include onedepression pattern 152. In some cases, at least two depression patternsmay be formed on the pixel area P. The number of the depression patterns152 may determine the number of the liquid crystal domains.

The domain-forming layer 150 may further include a contact hole 154exposing a portion of the contact electrode CNT. The pixel electrode PEmay contact the contact electrode CNT through the contact hole 154, sothat the pixel electrode PE may be electrically connected to the TFT SW.

The second substrate 200 and the liquid crystal layer 300 may besubstantially the same as the second substrate and the liquid crystallayer described with reference to FIG. 2A and FIG. 2B, and thus anyrepetitive detailed explanation may hereinafter be omitted.

Hereinafter, a method of manufacturing a display device according tosome exemplary embodiments may be described with reference to FIG. 7 andFIG. 8.

FIG. 8 is a cross-sectional view showing a method of manufacturing thedisplay device of FIG. 7.

In FIG. 8, steps for respectively forming the storage line STL, the gateinsulation layer 120, the first and second data lines DL1 and DL2, andthe passivation layer 140 may be substantially the same as the stepsexplained with reference to FIG. 3A. Thus, any repetitive detailedexplanation may be hereinafter omitted.

Referring to FIG. 8, the domain-forming layer 150 may be formed on thepassivation layer 140, and the domain-forming layer 150 may be patternedusing a first mask A to form the depression pattern 152.

The domain-forming layer 150 may be formed from a positive-typephotoresist composition. The first mask ‘A’ may include a light-blockingportion 1 which may block light and a translucent portion 2 which mayallow, at least partially, light to pass through. The first mask ‘A’ mayallow approximately 0% to 30% of the light irradiated onto an upperportion of the first mask ‘A’ to pass through the translucent portion 2.

When light is irradiated onto the upper portion of the first mask ‘A’and the domain-forming layer 150 is developed, the domain-forming layer150 corresponding to (i.e., aligned with) the light-blocking portion ‘1’may remain on the passivation layer 140 and a portion of thedomain-forming layer 150 corresponding to the translucent portion ‘2’may be removed to form the depression pattern 152.

The pixel electrode PE and the first alignment layer AL1 maysequentially be formed on the domain-forming layer 150 comprising thedepression pattern 152. The pixel electrode PE and the first alignmentlayer AL1 may be formed to cover an entire surface of the pixel area P.Thus, the first substrate 100 according to Example 3 may bemanufactured.

Referring again to FIG. 7, the second substrate 200 may be manufactured,and the first substrate 100 and the second substrate 200 may beassembled with each other to produce the liquid crystal layer 300, sothat the display device according to some exemplary embodiments of thepresent invention may be manufactured.

In FIG. 7, a process manufacturing the second substrate 200 and aprocess manufacturing the liquid crystal layer 300 may substantially bethe same as processes described with reference to FIG. 3A and FIG. 3E,respectively. Thus, any repetitive detained explanation may behereinafter omitted.

As described above, a liquid crystal domain may be formed by forming thedepression pattern 152 without forming a separate pattern on the commonelectrode 250. Thus, the aperture ratio of the pixel area P and aviewing angle may be enhanced. Moreover, since a separate pattern maynot be formed on the common electrode 250, misalignment of the first andsecond substrates 100 and 200 may, in principle, be removed.Furthermore, a separate patterning process for patterning the commonelectrode 250 may be omitted, so that a manufacturing process of thedisplay device may be simplified.

EXAMPLE 4

FIG. 9 is a cross-sectional view of a display device according to someexemplary embodiments of the present invention.

A plan structure of the display device illustrated in FIG. 9 may besubstantially the same as a plan structure of the display devicedescribed with reference to FIG. 1. Thus a detailed description of theplan view of FIG. 9 may be omitted.

The display device of FIG. 9 is substantially the same as the displaydevice of FIG. 2B except for a main spacer 340 and a sub-spacer 350, andany repetitive detailed explanation may hereinafter be omitted.

Referring to FIG. 9, a display device may include a first substrate 100,a second substrate 200, and a liquid crystal layer 300.

The first substrate 100 may include a storage line STL, a gateinsulation layer 120 formed on the storage line STL, first and seconddata lines DL1 and DL2 formed on the gate insulation layer 120, acontact electrode CNT of a TFT SW, a passivation layer 140 formed on thefirst and second data lines DL1 and DL2, a domain-forming layer 150including a depression pattern 152 for forming a liquid crystal domainof a pixel area P, a pixel electrode PE, and a first alignment layerAL1.

The second substrate 200 may include a black matrix pattern 220 formedon a second base substrate 210, first, second and third color filters232, 234 and 236, an overcoating layer 240, a common electrode 250, asecond alignment layer AL2, a main spacer 340, and a sub-spacer 350.

The main spacer 340 may be formed on the second substrate 200 tomaintain an interval between the first substrate 100 and the secondsubstrate 200. The height of the main spacer 340 may be substantiallyequal to a cell gap of the liquid crystal layer 300. The main spacer 340may be disposed on the first alignment layer AL1.

The sub-spacer 350 may be formed on the second substrate 200. When thedisplay device is suppressed by an external force, the sub-spacer 350may buffer an interval between the first and second substrates 100 and200 so that liquid crystal molecules 310 of the liquid crystal layer 300may not be damaged. The height of the sub-spacer 350 may be less thanthe height of the main spacer 340.

The main spacer 340 and/or the sub-spacer 350 may be formed on thesecond base substrate 210 corresponding to an area in which thedepression pattern 152 is formed. A long axis of the liquid crystalmolecules 310 may be arranged perpendicular to a surface of the mainspacer 340 and/or the sub-spacer 350, so that the liquid crystalmolecules 310 situated in the depression pattern 152 may be pretilted.That is, the liquid crystal molecules 310 may be pretilted relative tothe depression pattern 152 and one of the main spacer 340 and thesub-spacer 350.

Hereinafter, a method of manufacturing a display device according toExample 4 may be described with reference to the following FIGS. 9 and10.

Referring to FIG. 9, the first substrate 100 may be manufactured. Thefirst substrate 100 may be manufactured through processes that aresubstantially the same as the processes described with reference to FIG.3A, FIG. 3B, and FIG. 3C.

The second substrate 200 may then be manufactured in substantially thesame manner as the second substrate described with reference to FIG. 3Dexcept for manufacturing of the main spacer 340 and the sub-spacer 350.Thus any repetitive detailed explanation may hereinafter be omitted.

FIG. 10 is a cross-sectional view showing a method of manufacturing thedisplay device of FIG. 9.

Referring to FIG. 10, a photo layer (not shown) may be formed on thesecond alignment layer AL2. The second photo layer may be developedusing a second mask B disposed on the photo layer to form the mainspacer 340 and the sub-spacer 350.

The photo layer may include a positive photoresist composition. Thesecond mask B may include a light-blocking portion 1, a translucentportion 2, and a light-permeating portion 3. The light-permeatingportion 3 may be an area through which most of the light irradiated onan upper portion of the second mask B may passes.

Light may be irradiated on an upper portion of the second mask B andthen the photo layer may be developed. A portion of the photo layercorresponding to the light-blocking portion 1 may remain to form themain spacer 340. A portion of the photo layer corresponding to thetranslucent portion 2 may be removed, and a remainder of the photo layermay remain to form the sub-spacer 350. A portion of the photo layercorresponding to the transparent portion 3 may be removed therebyexposing the second alignment layer AL2. Thus, the second substrate 200according to some exemplary embodiments may be manufactured.

The liquid crystal layer 300 may be formed between the first substrate100 and the second substrate 200. Steps to form liquid crystal layer 300may be substantially the same as the steps described with reference toFIG. 3E. Thus any repetitive detailed explanation may hereinafter beomitted.

Accordingly, the display device according to Example 4, which mayinclude the first substrate 100, the second substrate 200, and theliquid crystal layer 300, may be manufactured.

In FIG. 9 and FIG. 10, the sub-spacer 350 may be formed relative to thedepression pattern 152. In some cases, the main spacer 350 may be formedrelative to the depression pattern 152, so that the liquid crystalmolecules 310 may be pretilted.

Accordingly, in the display device described with reference to FIG. 9and FIG. 10, the aperture ratio of the pixel area P may be increased,and a viewing angle may be enhanced. Moreover, the reliability of amanufacturing process may be enhanced and a manufacturing process may besimplified.

EXAMPLE 5

FIG. 11 is a plan view illustrating a display device according toExample 5 of the present invention.

FIG. 12 is a cross-sectional view taken along a line IV-IV′ of FIG. 11.

Referring to FIG. 11 and FIG. 12, a display device may include a firstsubstrate 100, a second substrate 200, and a liquid crystal layer 300.

The first substrate 100 may include a first base substrate 110, firstand second gate lines GL1 and GL2, a storage line STL, a gate insulationlayer 120, first and second data lines DL1 and DL2, a TFT SW that may bea switching element, a passivation film 140, a domain-forming layer 150,a pixel electrode PE, a reflective electrode RFE, and a first alignmentlayer AL1. The first substrate 100 may be substantially the same as thefirst substrate described with reference to FIG. 1, FIG. 2A, and FIG. 2Bexcept for the TFT SW, the domain-forming layer 150, and the reflectiveelectrode RFE. Any repetitive detailed explanation may hereinafter beomitted.

The TFT SW may include a gate electrode GE connected to the first gateline GL1, an active pattern (not shown) formed on the gate electrode GE,a source electrode SE connected to the first data line DL1, a drainelectrode DE spaced apart from the source electrode SE, a first contactpattern CT1 connected to the drain electrode DE to contact the pixelelectrode PE, and a second contact pattern CT2 connected to the firstcontact pattern CT1 extended in a pixel area P. The second contactpattern CT2 may also contact the reflective electrode RFE.

The domain-forming layer 150 may cover the first and second data linesDL1 and DL2. The domain-forming layer 150 may include a depressionpattern 152 forming a liquid crystal domain of the pixel area P. Thedepression pattern 152 may include a first hole pattern H1 exposing aportion of the first contact pattern CT1 and a second hole pattern H2exposing a portion of the second contact pattern CT2. A first liquidcrystal domain may be formed by the first hole pattern H1, and a secondliquid crystal domain may be formed by the second hole pattern H2. Thatis, one pixel area P may be divided into two liquid crystal domains.

The pixel electrode PE may be formed on the domain-forming layer 150,and, in some cases, may be formed in one area of the pixel area P. Thepixel electrode PE may be formed using ITO and/or IZO. The reflectiveelectrode RFE may be formed on the domain-forming layer 150 in anotherarea of the pixel area P. The reflective electrode RFE may be formed, atleast partially, of aluminum (Al). The first alignment layer AL1 may bedisposed on the pixel electrode PE and the reflective electrode RFE.

The second substrate 200 and the liquid crystal layer 300 aresubstantially the same as the second substrate and the liquid crystallayer described with reference to FIG. 1, FIG. 2A, and FIG. 2B, and thusany repetitive detailed explanation may hereinafter be omitted.

As illustrated in FIG. 11 and FIG. 12, in some cases, the storage lineSTL may be situated between the first contact pattern CT1 and the secondcontact pattern CT2. In some cases, the storage line STL may overlapwith the first contact pattern CT1 and/or the second contact patternCT2.

In some cases, the depression pattern 152 may have two hole patterns H1and H2. In some cases, the depression pattern 152 may have a pluralityof hole patterns to form a plurality of liquid crystal domains.

In some cases, the second hole pattern H2 may be not formed in thedepression pattern 152.

In some cases, the pixel electrode PE and the reflective electrode RFEmay be electrically connected to each other by a bridge. In some cases,to enhance side visibility (e.g., wide angle viewing), the pixelelectrode PE and the reflective electrode RFE may be driven by using afirst transistor connected to the pixel electrode PE and a secondtransistor connected to the reflective electrode RFE, or may be drivenusing a common swing method in which a common voltage applied to acommon electrode may vary with respect to a data voltage.

FIG. 13A and FIG. 13B are cross-sectional views showing a method ofmanufacturing the display device of FIG. 12.

Referring to FIG. 12 and FIG. 13A, a storage line STL may be formed onthe first base substrate 110, and the gate insulation layer 120 may beformed on the storage line STL. The first and second contact patternsCT1 and CT2 may be formed on the gate insulation layer 120. Thepassivation layer 140 and the domain-forming layer 150 are sequentiallyformed on the first and second contact patterns CT1 and CT2. Thedomain-forming layer 150 may be patterned to form the depression pattern152 having the first and second hole patterns H1 and H2.

Then, the passivation layer 140 exposed through the depression pattern152 may be removed to expose the first and second contact electrodes CT1and CT2, respectively, thereby forming a transmissive electrode layer(not shown). The transmissive electrode layer may contact the firstcontact pattern CT1 through the first hole pattern H1 and the secondcontact pattern CT2 through the second hole pattern H2. The transmissiveelectrode layer may then be patterned adjacent to the first hole patternH1 to form the pixel electrode PE contacting the first contact patternCT1.

Referring to FIG. 13B, an opaque electrode layer (not shown) may beformed on the first base substrate 110 on which the pixel electrode PEis formed. The opaque electrode layer may be patterned adjacent to thesecond hole pattern H2 to form the reflective electrode RFE contactingthe second contact pattern CT2.

Then, the first alignment layer AL1 may be formed on the pixel electrodePE and the reflective electrode RFE. The pixel electrode PE and thefirst alignment layer AL1 may be formed without using a separate patternto cover the entire surface of the pixel area P. Thus, the firstsubstrate 100 according to some exemplary embodiments may bemanufactured.

The second substrate 200 facing the first substrate 100 may bemanufactured and the liquid crystal layer 300 may be formed between thefirst substrate 100 and the second substrate 200, so that a displaydevice according to Example 5 may be manufactured. A step forming thesecond substrate 200 and a step forming the liquid crystal layer 300 maybe substantially the same as the steps explained in FIGS. 3D and 3E,respectively, and thus any repetitive detailed explanation may behereinafter omitted.

FIG. 14 is a cross-sectional view illustrating a transmissive-modedisplay device having a structure of FIG. 11.

A plan structure of a transmissive-mode display device of FIG. 14 may besubstantially the same as a plan structure of FIG. 11. Moreover, thedisplay device of FIG. 14 may be substantially the same as the displaydevice of FIG. 12 except for a transmissive electrode TE, and thus anyrepetitive detailed explanation may hereinafter be omitted.

Referring to FIG. 14, a pixel electrode PE and a transmissive electrodeTE may be formed on a domain-forming layer 150. The transmissiveelectrode TE may contact a second contact pattern CT2 through a secondhole pattern H2. The transmissive electrode TE may include ITO and IZO,and may be identical to material(s) used to form the pixel electrode PE.

In FIG. 14, the pixel electrode PE and the transmissive electrode TE maybe physically divided from each other. In some cases, the transmissiveelectrode TE may be connected to the pixel electrode PE.

According to the description of the display device in Example 5, anaperture ratio of the pixel area P may be increased, and a viewing anglemay be enhanced. For example, a plurality of liquid crystal domains maybe formed in one pixel area P, so that a viewing angle may be furtherenhanced. Moreover, the reliability of a manufacturing process may beenhanced and a manufacturing process may be simplified, so that theproductivity of the display device may be enhanced.

EXAMPLE 6

FIG. 15 is a plan view illustrating a display device according to someexemplary embodiments of the present invention.

FIG. 16 is a cross-sectional view taken along a line V-V′ of FIG. 15.

Referring to FIG. 15 and FIG. 16, a display device may include a firstsubstrate 100, a second substrate 200, and a liquid crystal layer 300.

The first substrate 100 may include a first base substrate 110, firstand second gate lines GL1 and GL2, a storage line STL, a bottomelectrode BE, a gate insulation layer 120, first and second data linesDL1 and DL2, a TFT SW that may be a switching element, a domain-forminglayer 150, a pixel electrode PE, and a first alignment layer AL1. Thefirst substrate 100 may be substantially the same as the first substratedescribed in FIG. 1, FIG. 2A, and FIG. 2B except for the bottomelectrode BE, and thus any repetitive detailed explanation mayhereinafter be omitted.

The bottom electrode BE may be formed in a pixel area P to overlap thepixel electrode PE. The gate insulation layer 120 and the contactelectrode CNT of the TFT SW may be formed between the bottom electrodeBE and the pixel electrode PE. The bottom electrode BE may be formed onthe storage line STL. The bottom electrode BE may directly contact thestorage line STL and may be electrically connected to the storage lineSTL.

The bottom electrode BE and the pixel electrode PE may be charged atdifferent voltages. As a result, an electric field may develop acrossthe gate insulation layer 120. Accordingly, the entire area of the pixelarea P may be used as a storage capacitor Cst.

The second substrate 200 and the liquid crystal layer 300 aresubstantially the same as the second substrate and the liquid crystallayer described in FIG. 1, FIG. 2A, and FIG. 2B, and thus any repetitivedetailed explanation may hereinafter be omitted.

FIG. 17A, FIG. 17B, and FIG. 17C are cross-sectional views showing amethod of manufacturing the display device of FIG. 16.

Referring to FIG. 16 and FIG. 17, a gate metal layer (not shown) may beformed on the first base substrate 110, and patterned to form a gatepattern including the first and second gate lines GL1 and GL2, the gateelectrode GE, and the storage line STL.

The gate pattern may include a transmissive electrode layer TEL formedon the first base substrate 110. The transmissive electrode TEL mayinclude a transparent conductive material. The transparent conductivematerial TEL may be indium tin oxide (ITO) and/or indium zinc oxide(IZO). In general, any suitable material(s) and combination thereof maybe used for transparent conductive material.

Referring to FIG. 17B, the transmissive electrode layer TEL may bepatterned to form the bottom electrode BE. The bottom electrode BE maydirectly contact the storage line STL.

Then, the gate insulation layer 120 may be formed on the bottomelectrode BE.

Referring to FIG. 17C, an active pattern AP of the TFT SW may be formedon the gate insulation layer 120, and a source pattern including thefirst and second data lines DL1 and DL2, the source electrode SE, thedrain electrode DE and the contact electrode CNT may be formed. Thepassivation film 140 may be formed on the source pattern, and thedomain-forming layer 150 may be formed on the passivation film 140.

A depression pattern 152 exposing a portion of the contact electrode CNTmay be formed on the domain-forming layer 150. The pixel electrode PEand the first alignment layer AL1 may be sequentially formed on thedepression pattern 152. The pixel electrode PE and the first alignmentlayer AL1 may be formed without a separate pattern covering, in somecases, the entire surface of the pixel area P. Thus, the first substrate100 according to Example 6 may be manufactured.

The second substrate 200 facing the first substrate 100 may bemanufactured and the liquid crystal layer 300 may be formed between thefirst and second substrates 100 and 200, so that the display deviceaccording to some exemplary embodiments may be manufactured. A step formanufacturing the second substrate 200 and a step for manufacturing theliquid crystal layer 300 are substantially the same as the stepsdescribed in FIGS. 3D and 3E, respectively, and thus any repetitivedetailed explanation may hereinafter be omitted.

According to the description of the display device in Example 6, anaperture ratio of the pixel area P may be increased, and a viewing anglemay be enhanced. Moreover, the reliability of a manufacturing processmay be enhanced and a manufacturing process may be simplified, so thatthe productivity of the display device may be enhanced.

EXAMPLE 7

FIG. 18 is a plan view illustrating a display device according to someexemplary embodiments of the present invention.

FIG. 19A is a cross-sectional view taken along a line VI-VI′ of FIG. 18,and FIG. 19B is a cross-sectional view taken along a line VII-VII′ ofFIG. 18.

Referring to FIG. 18, FIG. 19A, and FIG. 19B, a display device mayinclude a first substrate 100, a second substrate 200, and a thirdsubstrate 300.

The first substrate 100 may include a first base substrate 110, firstand second gate lines GL1 and GL2, a storage line STL, a bottomelectrode BE, a gate insulation layer 120, first and second data linesDL1 and DL2, a TFT SW that may be a switching element, a passivationfilm 140, a domain-forming layer 150, a pixel electrode PE, and a firstalignment layer AL1.

The first and second gate lines GL1 and GL2 may be extended along afirst direction D1 on the first base substrate 110. In some cases, thefirst and second data lines DL1 and DL2 may be arranged in a seconddirection D2 that may be different from the first direction D1. Thesecond direction D2 may be substantially perpendicular to the firstdirection D1.

The storage line STL may be disposed between the first and second gatelines GL1 and GL2 to be extended along the first direction D1. Thebottom electrode BE may directly contact a portion of the storage lineSTL. The bottom electrode BE may be formed in a pixel area P of thefirst base substrate 110.

The gate insulation layer 120 may be formed on the first base substrate110 to cover the first and second gate lines GL1 and GL2, the storageline STL, and the bottom electrode BE.

The first and second data lines DL1 and DL2 may extend along the seconddirection D2 on the gate insulation layer 120. The first and second datalines DL1 and DL2 may cross the first and second gate lines GL1 and GL2and the storage line STL.

The TFT SW may include a first gate electrode GE1, an active pattern AP,a is source electrode SE, a drain electrode DE, and a contact electrodeCNT. The first gate electrode GE1 may be connected to the first gateline GL1. The active pattern AP may be formed on the gate insulationlayer 120 adjacent to the first gate electrode GE1. The source electrodeSE may be connected to the first data line DL1 to overlap the activepattern AP. The drain electrode DE may be spaced apart from the sourceelectrode SE to overlap the active pattern AP. The contact electrode CNTmay extend from the drain electrode DE to the pixel area P. The contactelectrode CNT may extend from the drain electrode DE to overlap aportion of the storage line STL. The contact electrode CNT may have alarge size and may be formed in an area adjacent to the first gate lineGL1.

The domain-forming layer 150 may be formed on the passivation layer 140.The domain-forming layer 150 may planarize the first substrate 100. Thedomain-forming layer 150 may have a contact hole 154 exposing thecontact electrode CNT. The pixel electrode PE formed on thedomain-forming layer 150 may contact the contact electrode CNT throughthe contact hole 154, so that the pixel electrode PE may be electricallyconnected to the TFT SW.

The pixel electrode PE may be formed on the domain-forming layer 150 ofthe pixel area P. The pixel electrode PE may include an opticallytransparent and electrically conductive material. The pixel electrode PEmay have a dot-shaped opening pattern 162 formed in the pixel area P.The dot shape may be a circular shape, a polygonal shape, or a lineshape. It should be understood that any suitable shape may be used inthe opening pattern 162. The liquid crystal molecules 310 of the liquidcrystal layer 300 may converge towards a position in the secondsubstrate 200 corresponding to an area in which the opening pattern 162is formed. The liquid crystal molecules 310 may also be situated aroundthe contact hole 154 and/or the pixel electrode PE. The opening pattern162 may form a liquid crystal domain of the pixel area P. Moreover, adirection of the electric field in the liquid crystal layer 300 may becurved between an end portion of another pixel electrode adjacent to thepixel electrode PE and the common electrode 250. Accordingly, the liquidcrystal molecules 310 adjacent to the pixel electrodes PE may bediffused toward a different position of the common electrode 250, sothat a liquid crystal domain between adjacent pixel areas P may bedivided.

The first alignment layer AL1 may be formed, in some cases, on theentire surface of the first base substrate 110 including the pixelelectrode PE.

The second substrate 200 may include a second base substrate 210, ablack matrix pattern 220, first and second color filters 232, 234 and236, an overcoating layer 240, a common electrode 250, and a secondalignment layer AL2. The liquid crystal layer 300 may include liquidcrystal molecules 310, and an RM curing structure 320. The secondsubstrate 200 and the liquid crystal layer 300 are substantially thesame as the second substrate and the liquid crystal described withreference to FIG. 2A and FIG. 2B, and the any repetitive detailedexplanation may hereinafter be omitted.

Hereinafter, a method of manufacturing the first substrate 100 and thesecond substrate 200 according to some exemplary embodiments may bedescribed with reference to FIG. 19A and FIG. 19B.

Referring to FIG. 19A and FIG. 19B, a gate metal layer (not shown) maybe formed on the first base substrate 110, and the gate metal layer maybe patterned to form a gate pattern including the first and second gatelines GL1 and GL2, the gate electrode GE, and the storage line STL.

A transmissive electrode layer (not shown) may be formed on the firstbase substrate 110 and the gate pattern. The transmissive electrodelayer may be patterned to form the is bottom electrode, which maydirectly contact a first end portion of the storage line STL. In thepixel area P, the bottom electrode BE may directly contact the firstbase substrate 110.

The active pattern AP may be formed on the first base substrate 110 onwhich the bottom electrode BE is formed. A source metal layer (notshown) may be formed on the first base substrate 110 including theactive pattern AP. The source metal layer may be patterned to form asource pattern including the first and second data lines DL1 and DL2,the source electrode SE, the drain electrode DE, and the contactelectrode CNT.

The passivation layer 140 and the domain-forming layer 150 may besequentially formed on the source pattern, and the pixel electrode PEand the first alignment layer AL1 may be sequentially formed on thedomain-forming layer 150. Thus, the first substrate according to thesome exemplary embodiments may be manufactured.

The second substrate 200 facing the first substrate 100 may bemanufactured and the liquid crystal layer 300 may be formed between thefirst and second substrates 100 and 200, so that the display deviceaccording to Example 7 may be manufactured. Steps for manufacturing thesecond substrate 200 may be substantially the same as the stepsdescribed with reference to FIG. 3D, and thus any repetitive detailedexplanation may hereinafter be omitted. Hereinafter, a step for formingthe liquid crystal layer 300 may be explained in detail with referenceto FIG. 20.

FIG. 20 is a flowchart showing a method of manufacturing the displaydevice of FIG. 19B.

Referring to FIG. 19B and FIG. 20, the first substrate 100 and thesecond substrate 200 may be assembled with each other, and a liquidcrystal composition material may be disposed between the first andsecond substrates 100 and 200. The liquid crystal composition materialmay include a plurality of liquid crystal molecules 310 and a pluralityof RM monomers 330 (refer to FIG. 3E).

When the liquid crystal composition material is disposed between thefirst and second substrate 100 and 200, a first voltage Vcom may beapplied to the common electrode 250 (step S12), and a second voltage Vb1may be applied to the bottom electrode BE (step S14).

In some cases, the first voltage Vcom may be about 0 V. The secondvoltage Vb1 may be higher than the first voltage Vcom. In some cases,the second voltage Vb1 may range from about 7 V to about 16 V. Thebottom electrode BE may receive the second voltage Vb1 through thestorage line STL. An electric field may be generated between the firstand second substrates 100 and 200 due to the applied first voltage Vcomand second voltage Vb1. Due to the electric field, a long axis of theliquid crystal molecules 310 may be arranged in a perpendiculardirection (e.g., perpendicular to the electric field).

Then, a third voltage Vdata may be applied to the pixel electrode PE(step S16). The third voltage Vdata may be higher than the first voltageVcom and may be lower than the second voltage Vb1. The third voltageVdata may be a positive polarity voltage or a negative polarity voltage.For example, the third voltage Vdata may be about 5 V.

When the liquid crystal molecules 310 are pretilted by using the firstto third voltages Vcom, Vb1 and Vdata, UV light is irradiated onto thefirst and second substrates 100 and 200 (step S50). The RM monomers 330may be reactive to the UV light and may be polymerized. The polymerizedRM curing material 320 (refer to FIG. 19B) may be formed, the liquidcrystal molecules 310 may be fixed adjacent to the pixel electrode PEand/or the common electrode 250, and the liquid crystal molecules 310may be pretilted by the RM curing material 320.

As described above, the second voltage Vb1 may be higher than the thirdvoltage Vdata applied to the pixel electrode PE and may be provided tothe bottom electrode BE, so that the liquid crystal molecules 310disposed in an area adjacent to the opening pattern 162 may be stablyarranged using a strong electric field. Therefore, the liquid crystallayer 300 according to the Example 7 may be formed.

According to the description of the display device in Example 6, anaperture ratio of the pixel area P may be increased, and a viewing anglemay be enhanced. Moreover, the reliability of a manufacturing processmay be enhanced and a manufacturing process may be simplified, so thatthe productivity of the display device may be enhanced.

Hereinafter, another method of manufacturing a display device accordingthe present embodiment may be explained in detail with reference to FIG.19A, FIG. 19B, and FIG. 21. Steps for manufacturing the first and secondsubstrates 100 and 200 according to the some exemplary embodiments aresubstantially the same as the steps for manufacturing the first andsecond substrates according to Example 7, respectively, and thus anyrepetitive detailed explanation may be hereinafter omitted.

Referring to FIG. 19A, FIG. 19B, and FIG. 21, the first substrate 100and the second substrate 200 may be respectively manufactured andassembled with each other. A liquid crystal composition material may bedisposed between the first and second substrates 100 and 200. The liquidcrystal composition material may include a plurality of liquid crystalmolecules 310, and a plurality of RM monomers 330 (refer to FIG. 3E).

FIG. 21 is a flowchart showing a method of manufacturing a displaydevice according to exemplary embodiments of the present invention.

Referring to FIG. 21, when the liquid crystal composition material isdisposed between the first substrate 100 and the second substrate 200, afirst voltage Vcom may be applied to the common electrode 250 (stepS22), and a second voltage Vb1 may be applied to the bottom electrode BE(step S24). The second voltage Vb1 may be higher than the first voltageVcom. The second voltage Vb1 may be provided to the bottom electrode BEthrough the storage line STL.

An electric field may be generated between the first and secondsubstrates 100 and 200 due to the applied first voltage Vcom and secondvoltage Vb1. Due to the electric field, a long axis of the liquidcrystal molecules 310 may be arranged in a perpendicular direction(e.g., perpendicular to the electric field).

A third voltage Vdata may then be applied to the pixel electrode PE(step S26). The third voltage Vdata may be higher than the first voltageVcom and may be lower than the second voltage Vb1. Even though the thirdvoltage Vdata may be applied to the pixel electrode PE, a strongelectric field may form adjacent to the opening pattern 162, so that anarrangement of liquid crystal molecules 310 disposed adjacent to theopening pattern 162 may not vary in comparison to an arrangement inwhich just the first voltage Vcom and the second voltage Vb1 areapplied. In some cases, the first, second, and third voltages Vcom, Vb1,and Vdata may employ a positive polarity voltage or a negative polarityvoltage. In some cases, the first, second, and third voltages Vcom, Vb1,and Vdata may employ a DC voltage or an AC voltage.

A fourth voltage Vb2 may be applied to the bottom electrode BE (stepS28). The fourth voltage Vb2 may be greater than the first, second, andthird voltages Vcom, Vb1, and Vdata. The fourth voltage Vb2 may be, forexample, about 25 V. Thus, a strong electric field is formed between thecommon electrode 250 and the bottom electrode BE when the fourth voltageVb2 is applied, and a long axis of the liquid crystal molecules 310 maybe perpendicular to the electric field direction due to the electricfield formed between the common electrode 250 and the bottom electrodeBE.

When the liquid crystal molecules 310 are pretilted using the first tofourth voltages Vcom, Vb1, Vdata, and Vb2, UV light may be irradiatedonto the first and second substrates 100 and 200 (step S50). Due to theUV light, the RM monomers may react to light and may be polymerized.Thus, the polymerized RM curing material 320 (refer to FIG. 19B) may beformed, and the liquid crystal molecules 310 may be fixed adjacent tothe pixel electrode PE and/or the common electrode 250 in a state inwhich the liquid crystal molecules 310 are pretilted by the RM curingmaterial 320.

As described above, the second voltage Vb1 and the fourth voltage Vb2may be supplied to the bottom electrode BE so that the liquid crystalmolecules 310 disposed in an area adjacent to the opening pattern 163may be stably arranged in a strong electric field. The third voltageVdata may be applied to the bottom electrode BE before the fourthvoltage Vb2 is applied to the bottom electrode BE, so that rapidmovement of the liquid crystal molecules 310 may be prevented.Accordingly, the liquid crystal molecules 310 disposed in an areaadjacent to the opening pattern 163 may be stably arranged in a strongelectric field.

Although not shown in FIG. 21, irradiation of UV light onto the firstsubstrate 100 and the second substrate 200 may be further performedbefore the fourth voltage Vb2 is applied to the bottom electrode BE. UVlight may be irradiated onto the first and second substrates 100 and 200to partially react and polymerize the RM monomers 330 before the fourthvoltage Vb2 is applied thereto. The UV light may again be irradiatedthereto after the fourth voltage Vb2 is applied thereto, so that the RMmonomers 330 may be fully polymerized.

According to the description of the display device in Example 7, anaperture ratio of the pixel area P may be increased, and a viewing anglemay be enhanced. For example, liquid crystal molecules 310 of the liquidcrystal layer 300 may be stably pretilted. Thus, the reliability of amanufacturing process may be enhanced and a manufacturing process may besimplified, so that the productivity of the display device may beenhanced.

EXAMPLE 8

FIG. 22 is a cross-sectional view illustrating a display deviceaccording to some exemplary embodiments of the present invention.

In FIG. 22, the display device may be substantially the same as thedisplay device described with reference to FIG. 18, FIG. 19A, and FIG.19B except for a depression pattern 152 in the domain-forming layer 150,and thus any repetitive detailed explanation may hereinafter be omitted.

Referring to FIG. 22, a display device may include a first substrate100, a second substrate 200, and a liquid crystal layer 300.

The first substrate 100 may include a bottom electrode BE, a gateinsulation layer 120, first and second data lines DL1 and DL2, apassivation film 140, a domain-forming layer 150, a pixel electrode PE,and a first alignment layer AL1.

The domain-forming layer 150 may include a depression pattern 152 havinga dot shape formed in a pixel area P. The domain-forming layer 150 maybe removed by a predetermined thickness, so that the depression pattern152 may be formed. The depression pattern 152 may form a liquid crystaldomain in the pixel area P.

The pixel electrode PE may include an opening pattern 162 having a dotshape. The opening pattern 162 may be formed in an area corresponding tothe depression pattern 152. The first alignment layer AL1 may be formedon the pixel electrode PE and may contact the depression pattern 152through the opening pattern 162. The opening pattern 162 and thedepression pattern 152 may form a liquid crystal domain on the pixelarea P.

The second substrate 200 and the liquid crystal layer 300 may besubstantially the same as the second substrate and the liquid crystallayer described in FIG. 18, FIG. 19A, and FIG. 19B, and thus anyrepetitive detailed explanation may hereinafter be omitted.

The display device according to Example 8 may be manufactured using thesame manufacturing method described with reference to Example 7 exceptfor forming the depression pattern 152 on the domain-forming layer 150.

According to the description of the display device in Example 8, anaperture ratio of the pixel area P may be increased, and a viewing anglemay be enhanced. Moreover, liquid crystal molecules 310 of the liquidcrystal layer 300 may be stably pretilted. Thus, the reliability of amanufacturing process may be enhanced and a manufacturing process may besimplified, so that the productivity of the display device may beenhanced.

EXAMPLE 9

FIG. 23 is a cross-sectional view illustrating a display deviceaccording to some exemplary embodiments of the present invention.

In FIG. 23, the display device may be substantially the same as thedisplay device described with reference to FIG. 22 except for alight-blocking pattern BL in a first substrate 100. Any repetitivedetailed explanation may hereinafter be omitted.

Referring to FIG. 23, a display device may include a first substrate100, a second substrate 200, and a liquid crystal layer 300.

The first substrate 100 may include a light-blocking pattern BL, abottom electrode BE, a gate insulation layer 120, first and second datalines DL1 and DL2, a passivation film 140, a domain-forming layer 150, apixel electrode PE, and a first alignment layer AL1.

The light-blocking pattern BL may be formed by patterning a gate metallayer that may be identical to a metal layer forming the first andsecond gate lines GL1 and GL2. The light-blocking pattern BL may preventlight leakage, which may be due to an opening pattern 162 of thedomain-forming layer 150 and an opening pattern 162 of the pixelelectrode PE. The light-blocking pattern BL may be formed in an areacorresponding to the depression pattern 152 and the opening pattern 162.

The second substrate 200 and the liquid crystal layer 300 may besubstantially the same as the second substrate and the liquid crystallayer described with reference to FIG. 18, FIG. 19A, and FIG. 19B, andthus any repetitive detailed explanation may hereinafter be omitted.

The display device according to Example 9 may be manufactured using thesame manufacturing method as described for manufacturing the displaydevice according to Example 7 except for formation of the depressionpattern 152 on the domain-forming layer 150.

In FIG. 23, the light-blocking pattern BL may be formed from the gatemetal layer; however, the light-blocking pattern BL may be formed on thegate insulation layer 120 by patterning a source metal layer forming thefirst and second data lines DL1 and DL2. In some cases, thelight-blocking pattern BL may be formed from a layer identical to ablack matrix pattern 220 formed on the second substrate 200.

According to the description of the display device in Example 9, theaperture ratio of the pixel area P may be increased, and a viewing anglemay be enhanced. For example, liquid crystal molecules 310 of the liquidcrystal layer 300 may be stably pretilted. Thus, the reliability of amanufacturing process may be enhanced and a manufacturing process may besimplified, so that the productivity of the display device may beenhanced.

As described in detail, since a liquid crystal domain may be formedwithout a separate pattern on a common electrode, a display devicehaving an enhanced aperture ratio and an enhanced viewing angle may bemanufactured. Moreover, since a separate pattern is not formed on thecommon electrode, a misalignment cause of the first and secondsubstrates may be removed in principle so that a manufacturing processof a display device may have enhanced reliability. Furthermore, since aseparate patterning process for patterning the common electrode isomitted, a manufacturing process of the display device may besimplified. Therefore, the display device having enhanced productivityand display quality may be manufactured. The foregoing is illustrativeof the present invention and is not to be construed as limiting thereof.Although a few exemplary embodiments of the present invention have beendescribed, those skilled in the art will readily appreciate that manymodifications are possible in the exemplary embodiments withoutmaterially departing from the novel teachings and advantages of thepresent invention. Accordingly, all such modifications are intended tobe included within the scope of the present invention as defined in theclaims. In the claims, means-plus-function clauses are intended to coverthe structures described herein as performing the recited function andnot only structural equivalents but also equivalent structures.Therefore, it is to be understood that the foregoing is illustrative ofthe present invention and is not to be construed as limited to thespecific exemplary embodiments disclosed, and that modifications to thedisclosed exemplary embodiments, as well as other exemplary embodiments,are intended to be included within the scope of the appended claims.

What is claimed is:
 1. A display device, comprising: a first substratecomprising a pixel electrode and a domain-forming layer comprising adepression pattern, the depression pattern providing a liquid crystaldomain in a pixel area; a second substrate facing the first substrate,the second substrate comprising a common electrode; and a liquid crystallayer disposed between the first substrate and the second substrate, theliquid crystal layer comprising a reactive mesogen (RM) to fix liquidcrystal molecules in the liquid crystal domain, wherein the firstsubstrate further comprises a bottom electrode formed under thedomain-forming layer of the pixel area, the bottom electrode directlycontacting a storage line.
 2. The display device of claim 1, wherein thefirst substrate comprises a switching element comprising a contactelectrode electrically connected to the pixel electrode, and wherein thedepression pattern exposes the contact electrode.
 3. The display deviceof claim 2, wherein the storage line overlaps the contact electrode. 4.The display device of claim 1, wherein the domain-forming layercomprises at least one color filter.
 5. The display device of claim 1,wherein the domain-forming layer further comprises a contact holeexposing the contact electrode, the contact electrode contacting thepixel electrode.
 6. The display device of claim 1, wherein the bottomelectrode comprises a transmissive electrode layer.
 7. The displaydevice of claim 1, wherein the storage line directly contacts an endportion of the bottom electrode.
 8. A display device, comprising: afirst substrate comprising a domain-forming layer and a pixel electrodehaving an opening pattern to form a liquid crystal domain in a pixelarea; a second substrate facing the first substrate, the secondsubstrate comprising a common electrode; and a liquid crystal layerdisposed between the first substrate and the second substrate, theliquid crystal layer comprising a reactive mesogen to fix liquid crystalmolecules in the liquid crystal domain, wherein the first substratefurther comprises a bottom electrode formed under the domain-forminglayer of the pixel area, the bottom electrode directly contacting astorage line.
 9. The display device of claim 8, wherein the storage linedirectly contacting an end portion of the bottom electrode.
 10. A methodof manufacturing a display device, the method comprising: forming, on afirst substrate, a domain-forming layer comprising a depression pattern,the depression pattern providing a liquid crystal domain in a pixelarea; forming a pixel electrode on the domain-forming layer; forming acommon electrode on an entire surface of a second substrate; disposing aliquid crystal composition material comprising liquid crystal moleculesand reactive mesogen monomers between the first substrate and the secondsubstrate; and forming a liquid crystal layer by applying a light to theliquid crystal molecules and the reactive mesogen monomers disposedbetween the first substrate and the second substrate, wherein a firstvoltage is applied to the common electrode and a second voltage isapplied to the pixel electrode while applying the light, wherein thefirst substrate further comprises a bottom electrode formed under thedomain-forming layer of the pixel area, the bottom electrode directlycontacting a storage line.
 11. The method of claim 10, wherein formingthe liquid crystal layer comprises: irradiating light to the firstsubstrate and the second substrate, and wherein a magnitude of thesecond voltage is lower than a magnitude of the first voltage.